SILICON DIOXIDE REACTIVE ION ETCHING DEPENDENCE ON SHEATH VOLTAGE

[1] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[2] FLOOD EA, 1967, SOLID GAS INTERFACE, P78

[3] FORTUNO G, UNPUB B AM PHYS SOC

[4] RF GLOW-DISCHARGE SPUTTERING MODEL [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 92 - 97

[5] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469

[6] PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 4973 - 4983

[1] REACTIVE ION ETCHING FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319

[2] FLOOD EA, 1967, SOLID GAS INTERFACE, P78

[3] FORTUNO G, UNPUB B AM PHYS SOC

[4] RF GLOW-DISCHARGE SPUTTERING MODEL [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 92 - 97

[5] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469

[6] PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 4973 - 4983