GROWTH OF INP LAYERS BY VACUUM CHEMICAL EPITAXY (VCE)

被引：4

作者：

DECARVALHO, MMG

COTTA, MA

CAMILO, A

ITO, KM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90315-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：759 / 764

页数：6

共 8 条

[1]

BARRETO CL, 1987, REV FIS APLIC INSTR, V2, P307

[2] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J].

FRAAS, LM ;

MCLEOD, PS ;

CAPE, JA ;

PARTAIN, LD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :490-496

[3] HIGH-EFFICIENCY GAAS0.7P0.3 SOLAR-CELL ON A TRANSPARENT GAP WAFER [J].

FRAAS, LM ;

CAPE, JA ;

MCLEOD, PS ;

PARTAIN, LD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2302-2304

[4] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FRAAS, LM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6939-6343

[5]

FRAAS LM, 1986, J ELECTRON MATER, V15, P3

[6] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236

[7] EFFECTS OF SUBSTRATE TEMPERATURES AND V/III RATIOS ON EPITAXIAL INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

UWAI, K ;

SUSA, N ;

MIKAMI, O ;

FUKUI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L121-L123

[8] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO [J].

WALUKIEWICZ, W ;

LAGOWSKI, J ;

JASTRZEBSKI, L ;

RAVA, P ;

LICHTENSTEIGER, M ;

GATOS, CH ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2659-2668

← 1 →