FACETED MBE GROWTH OF (GAAL)AS ON RIE PATTERNED SURFACES

(GaAl)As layers were regrown by molecular beam epitaxy on wafers patterned by reactive ion etching with SiCl4. Excellent optical, electrical and morphological Properties were obtained for regrown material. Facet formation on nonplanar surfaces depends on adatom species, growth parameters and crystallographic planes. Regrowth on in-situ prepared AlGaAs surfaces was achieved after thermal desorption of thin GaAs passivation layers prior to the growth. The direct growth of buried heterostructures, nanostructures and butt joints is demonstrated.