TRANSIENT INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS FROM PICOSECONDS TO MILLISECONDS

被引：12

作者：

VARDENY, Z ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90585-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：317 / 324

页数：8

共 21 条

[1] PICOSECOND RELAXATION OF OPTICALLY INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS
ACKLEY, DE
TAUC, J
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (10) : 715 - 718
[2] PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON
JOHNSON, AM
AUSTON, DH
SMITH, PR
BEAN, JC
HARBISON, JP
ADAMS, AC
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6816 - 6819
[3] COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTOINDUCED MIDGAP ABSORPTION-MEASUREMENTS ON SPUTTERED A-SI-H
KIRBY, PB
PAUL, W
RAY, S
TAUC, J
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (07) : 533 - 535
[4] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
SERGENT, AM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476
[5] PHOTOINDUCED MIDGAP ABSORPTION IN TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
OCONNOR, P
TAUC, J
[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2748 - 2766
[6] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3
ORENSTEIN, J
KASTNER, M
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424
[7] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
ORENSTEIN, J
KASTNER, MA
[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (01) : 85 - 89
[8] TIME RESOLVED SPECTROSCOPY OF THE PHOTOINDUCED ABSORPTION IN GLOW-DISCHARGE A-SI-H
RAY, S
VARDENY, Z
TAUC, J
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 555 - 557
[9] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[10] TAUC J, 1982, ADV SOLID STATE PHYS, V22

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