CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION

[11] Elliot R. P., 1965, CONSTITUTION BINAR S

[12] ELLNER M, 1980, Z METALLKD, V71, P364

[13] THE STRUCTURE OF GOLD SILICIDE IN THIN AU-SI FILMS [J]. THIN SOLID FILMS, 1980, 68 (02) : 373 - 379

[14] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1284 - 1291

[15] SILICIDE SURFACE PHASES ON GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5098 - 5106

[16] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[17] FORMATION OF ALUMINUM SILICIDE BETWEEN 2 LAYERS OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 933 - 934

[18] METALLIC STATE OF SI IN SI-NOBLE-METAL VAPOR-QUENCHED ALLOYS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 57 - 60

[19] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &

[20] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[11] Elliot R. P., 1965, CONSTITUTION BINAR S

[12] ELLNER M, 1980, Z METALLKD, V71, P364

[13] THE STRUCTURE OF GOLD SILICIDE IN THIN AU-SI FILMS [J]. THIN SOLID FILMS, 1980, 68 (02) : 373 - 379

[14] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1284 - 1291

[15] SILICIDE SURFACE PHASES ON GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5098 - 5106

[16] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[17] FORMATION OF ALUMINUM SILICIDE BETWEEN 2 LAYERS OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 933 - 934

[18] METALLIC STATE OF SI IN SI-NOBLE-METAL VAPOR-QUENCHED ALLOYS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 57 - 60

[19] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &

[20] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612