IS NPN OR PNP THE BETTER CHOICE FOR MILLIMETER-WAVE ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

GAO, GB ^{[1
]}

ROULSTON, DJ ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 09期

关键词：

D O I：

10.1016/0038-1101(90)90101-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1209 / 1210

页数：2

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