MONTE-CARLO INVESTIGATION OF TRANSIENT HOLE TRANSPORT IN GAAS

[1] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039

[2] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1750 - 1754

[3] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[4] TRANSIENT ELECTRONIC TRANSPORT IN STAIRCASE HETEROSTRUCTURES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 419 - 421

[5] BRENNAN K, UNPUB

[6] ELECTRON DRIFT VELOCITY IN SILICON [J]. PHYSICAL REVIEW B, 1975, 12 (06) : 2265 - 2284

[7] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78

[8] COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P407

[9] SCATTERING PROBABILITIES FOR HOLES .1. DEFORMATION POTENTIAL AND IONIZED IMPURITY SCATTERING MECHANISMS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (02): : 471 - 482

[10] Frey J., 1980, International Electron Devices Meeting. Technical Digest, P613

[1] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039

[2] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1750 - 1754

[3] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[4] TRANSIENT ELECTRONIC TRANSPORT IN STAIRCASE HETEROSTRUCTURES [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 419 - 421

[5] BRENNAN K, UNPUB

[6] ELECTRON DRIFT VELOCITY IN SILICON [J]. PHYSICAL REVIEW B, 1975, 12 (06) : 2265 - 2284

[7] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78

[8] COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P407

[9] SCATTERING PROBABILITIES FOR HOLES .1. DEFORMATION POTENTIAL AND IONIZED IMPURITY SCATTERING MECHANISMS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (02): : 471 - 482

[10] Frey J., 1980, International Electron Devices Meeting. Technical Digest, P613