SELECTIVE PHOTOETCHING OF NORMAL-GAAS/ZNSE HETEROSTRUCTURES

被引：5

作者：

VANDEVEN, J

机构：

来源：

MATERIALS LETTERS | 1989年 / 7卷 / 12期

关键词：

D O I：

10.1016/0167-577X(89)90055-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：468 / 472

页数：5

共 9 条

[1]

KOLAK S, 1985, J CRYST GROWTH, V72, P504

[2]

MCGEE TF, 1988, APPL SURF SCI, V35, P371

[3] THE PREPARATION OF PLAN-VIEW TEM SAMPLES OF ZNSE EPILAYERS ON GAAS (100) SUBSTRATES BY SELECTIVE PHOTOELECTROCHEMICAL ETCHING [J].

NG, TL ;

PEMBLE, MF ;

WILLIAMS, JO ;

WRIGHT, AC ;

ZAINAL, Z .

JOURNAL OF MICROSCOPY-OXFORD, 1988, 150 :31-40

[4] WAVE-GUIDING EFFECTS IN LASER-INDUCED AQUEOUS ETCHING OF SEMICONDUCTORS [J].

PODLESNIK, DV ;

GILGEN, HH ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :496-498

[5] DEEP-ULTRAVIOLET INDUCED WET ETCHING OF GAAS [J].

PODLESNIK, DV ;

GILGEN, HH ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :563-565

[6]

van de Ven J., 1986, Chemtronics, V1, P19

[7] THE MECHANISM OF GAAS ETCHING IN CRO3-HF SOLUTIONS .1. EXPERIMENTAL RESULTS [J].

VANDEVEN, J ;

VANDENMEERAKKER, JEAM ;

KELLY, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) :3020-3026

[8]

VANDEVEN J, IN PRESS J ELECTROCH

[9] SELECTIVE ETCHING AND PHOTOETCHING OF (100) GALLIUM-ARSENIDE IN CRO3-HF AQUEOUS-SOLUTIONS .1. INFLUENCE OF COMPOSITION ON ETCHING BEHAVIOR [J].

WEYHER, J ;

VANDEVEN, J .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :285-291

← 1 →