AN EXPERIMENTAL-STUDY OF BACKGATING EFFECTS IN GAAS-MESFET

被引：9

作者：

SRIRAM, S

DAS, MB

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,SOLID STATE DEVICE LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1016/0038-1101(85)90028-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：979 / 989

页数：11

共 22 条

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