NITROGEN BONDING CHANGES VERSUS SUBSTRATE-TEMPERATURE EVIDENCED BY XPS IN SINXHY ALLOYS PREPARED WITH NH3

被引：21

作者：

KUBLER, L

HAUG, R

KOULMANN, JJ

BOLMONT, D

HLIL, EK

JAEGLE, A

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(85)90817-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：945 / 948

页数：4

共 12 条

[1] BOUCHIER D, 1983, J ELECTROCHEM SOC, V130, P642
[2] 2-PHASE STRUCTURE OF A-SI1-XNX-H FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUE
CHAYAHARA, A
UEDA, M
HAMASAKI, T
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01): : 19 - 23
[3] PREPARATION OF SI3N4 COATINGS BY ION PLATING
CHIN, J
ELSNER, NB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04): : 821 - 826
[4] ADSORPTION AND DECOMPOSITION OF AMMONIA ON W(100) - XPS AND UPS STUDIES
EGAWA, C
NAITO, S
TAMARU, K
[J]. SURFACE SCIENCE, 1983, 131 (01) : 49 - 60
[5] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS
IBARAKI, N
FRITZSCHE, H
[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5791 - 5799
[6] ISU T, 1983, SOLID STATE COMMUN, V42, P447
[7] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
KARCHER, R
LEY, L
JOHNSON, RL
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910
[8] EVAPORATED A-SI FILMS WITH LOW ELECTRON-SPIN-RESONANCE DEFECT DENSITY BY HYDROGENATION UNDER NH3 AMBIENT
KUBLER, L
KOULMANN, JJ
HAUG, R
JAEGLE, A
[J]. SOLID STATE COMMUNICATIONS, 1983, 48 (01) : 61 - 64
[9] KUBLER L, 1984, MRS C STRASBOURG, P645
[10] KURATA H, 1981, JPN J APPL PHYS, V20, P642