MECHANISM FOR REVERSE-BIASED BREAKDOWN RADIATION IN P-N JUNCTIONS

被引：64

作者：

SHEWCHUN, J

WEI, LY

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 05期

关键词：

D O I：

10.1016/0038-1101(65)90024-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：485 / &

共 22 条

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