SELECTIVE AREA GROWTH OF INP AND INGAAS LAYERS ON SIO2-MASKED SUBSTRATE BY CHEMICAL BEAM EPITAXY

Selective area growth of InP or InGaAs single layers and their superlattices has been studied. Increasing substrate temperature suppresses the formation of polycrystal grains on stripe masks. No deposition of the polycrystals occurs on 40-mu-m-wide masks above 510-degrees-C for InP and above 540-degrees-C for InGaAs. Secondary electron microscopy and cathode-luminescence (CL) spectroscopy of the superlattice reveal that layer thicknesses and CL peak wavelengths are uniform across the unmasked area, except in the vicinity of mask edges. The mechanism of selective growth is also discussed.