DEPOSITION OF INP PARTICLES ON SI3N4 AND SIO2-FILMS BY LOW-PRESSURE MOCVD

被引：13

作者：

TOMIYAMA, C

KURAMATA, A

YAMAZAKI, S

NAKAJIMA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 01期

关键词：

D O I：

10.1016/0022-0248(87)90117-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：115 / 122

页数：8

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