CRYSTALLOGRAPHY OF IN ON GAAS(110) - POSSIBLE RELATIONSHIP OF LATERALLY INHOMOGENEOUS STRUCTURE TO FERMI-LEVEL PINNING

被引:23
作者
SAVAGE, DE
LAGALLY, MG
机构
关键词
D O I
10.1103/PhysRevLett.55.959
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:959 / 962
页数:4
相关论文
共 14 条
[1]   ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE [J].
BOLMONT, D ;
CHEN, P ;
PROIX, F ;
SEBENNE, CA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16) :3639-3648
[2]   GAAS(110)-IN - THE BLACK SHEEP IN A WELL-BEHAVED INTERFACE FAMILY [J].
DANIELS, RR ;
ZHAO, TX ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :831-834
[3]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[4]  
FREEOUF JL, 1982, J VAC SCI TECHNOL, V21, P574
[5]   ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES [J].
KAHN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :684-691
[6]   SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].
LUDEKE, R ;
CHIANG, TC ;
MILLER, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587
[7]   CORRELATION BETWEEN NUCLEI ON THIN-FILMS DURING NUCLEATION [J].
METOIS, JJ ;
ZANGHI, JC ;
KERN, R .
PHILOSOPHICAL MAGAZINE, 1976, 33 (01) :133-142
[8]   SCHOTTKY-BARRIER FORMATION AND INTERMIXING OF NOBLE-METALS ON GAAS(110) [J].
PAN, SH ;
MO, D ;
PETRO, WG ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :593-597
[9]   TWO-DIMENSIONAL OVERLAYER GROWTH - ISLAND SIZE AND ISLAND SEPARATION DISTRIBUTIONS [J].
SALONER, D ;
WU, PK ;
LAGALLY, MG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1531-1534
[10]   A METHOD FOR THE CALCULATION OF LEED ANGULAR PROFILES TO ESTIMATE OVERLAYER SPACINGS AND ISLAND SIZE DISTRIBUTIONS [J].
SALONER, D ;
LAGALLY, MG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :935-938