STRUCTURAL-ANALYSIS OF ZNSE-GAAS QUANTUM-WELLS

被引：6

作者：

FUNATO, M

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 08期

关键词：

ZNSE-GAAS QW; X-RAY DIFFRACTION; TEM;

D O I：

10.1143/JJAP.32.3396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural properties of ZnSe-GaAs quantum wells (QWs) grown by metalorganic vapor phase epitaxy are described. Detailed theoretical and experimental studies on X-ray diffraction show that when the thickness of the QW well layer is comparable to that of the barrier layer, satellite peaks which reflect the period of QW can appear even in diffraction patterns of a single quantum well. It is also shown that the intensity of X-ray interference fringes can be modulated by fluctuation of each individual layer thickness in a multiple quantum well. These analyses revealed that it was possible to fabricate ZnSe-GaAs QWs with only 10 angstrom well thickness, and that these structures had high crystalline quality, a high degree of lateral uniformity, well-defined interfaces, and strong periodicity. Transmission electron microscopy also gave evidence for these properties.

引用

页码：3396 / 3402

页数：7

共 12 条

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