A 256K DYNAMIC RAM WITH PAGE-NIBBLE MODE

被引：9

作者：

FUJISHIMA, K ^{[1
]}

OZAKI, H ^{[1
]}

MIYATAKE, H ^{[1
]}

UOYA, S ^{[1
]}

NAGATOMO, M ^{[1
]}

SAITOH, K ^{[1
]}

SHIMOTORI, K ^{[1
]}

OKA, H ^{[1
]}

机构：

[1] COMP DEV LABS LTD,HYOGO,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 05期

关键词：

D O I：

10.1109/JSSC.1983.1051980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：470 / 478

页数：9

共 16 条

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[4]

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[5]

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[6]

ISHIHARA M, 1982, IEEE ISSCC, P74

[7] A 5 V-ONLY 64K DYNAMIC RAM BASED ON HIGH S-N DESIGN [J].

MASUDA, H ;

HORI, R ;

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ITOH, K ;

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[8]

MIYATAKE H, 1983, ELECTRON COMMUN ENG, P557

[9]

Nishioka K., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P24

[10]

OZAKI H, 1982, ELECTRON COMMUN ENG, P460

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