DESIGN OF EPITAXIAL METAL/ALAS/GAAS STRUCTURES FOR ENHANCEMENT OF THE SCHOTTKY-BARRIER HEIGHT

被引：7

作者：

CHEEKS, TL

SANDS, T

NAHORY, RE

HARBISON, JP

GILCHRIST, HL

KERAMIDAS, VG

机构：

[1] Bellcore, Red Bank, 07701, NJ

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 10期

关键词：

SCHOTTKY BARRIER; GAAS; EPITAXIAL METALS;

D O I：

10.1007/BF02665978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement of the Schottky barrier height was obtained in MBE grown (CoAl or NiAl)/AlAs/GaAs heterostructures by incorporating ultra thin AlAs layers between the metal and GaAs. By varying the AlAs thickness from 0 to 10 nm the effective barrier height, determined by current-voltage and capacitance-voltage measurements, could be tailored from 0.76 eV to 1.1 eV. Internal photoemission measurements were performed to verify the 1.1 eV barrier height. The temperature dependence of the current-voltage characteristics showed that thermionic emission was the dominant transport mechanism for all thicknesses of AlAs. The results were consistant with transport through the X-band of AlAs.

引用

页码：881 / 884

页数：4

共 11 条

[1]

Casey H.C., 1978, HETEROSTRUCTURE LASE

[2] BARRIER HEIGHTS AND ELECTRICAL-PROPERTIES OF INTIMATE METAL-ALGAAS JUNCTIONS [J].