NIAL/N-GAAS SCHOTTKY DIODES - BARRIER HEIGHT ENHANCEMENT BY HIGH-TEMPERATURE ANNEALING

被引：49

作者：

SANDS, T

CHAN, WK

CHANG, CC

CHASE, EW

KERAMIDAS, VG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 16期

关键词：

D O I：

10.1063/1.99152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1338 / 1340

页数：3

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