LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS

被引：9

作者：

COLEMAN, JA

LOVE, DP

TRAINOR, JH

WILLIAMS, DJ

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 01期

关键词：

D O I：

10.1109/TNS.1968.4324890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：482 / &

共 10 条

[1] PROTON INDUCED LATTICE DISPLACEMENTS IN SILICON [J].

BAICKER, JA ;

FLICKER, H ;

VILMS, J .

APPLIED PHYSICS LETTERS, 1963, 2 (05) :104-106

[2]

DEARNALEY G, 1963, IEEE T NUCLEAR SCI, VNS10, P106

[3]

DOWNING RG, 1966, 5 P PHOT SPEC C NASA

[4] ATOMIC DISPLACEMENTS IN SOLIDS BY NUCLEAR RADIATION [J].

GOLAND, AN .

ANNUAL REVIEW OF NUCLEAR SCIENCE, 1962, 12 :243-&

[5] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J].

GOULDING, FS ;

HANSEN, WL .

NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02) :249-262

[6]

JANNI JF, 1966, AFWLTR65150 KIRTL AI

[7] ENERGY DEPENDENCE ON PROTON IRRADIATION DAMAGE IN SILICON [J].

ROSENZWEIG, W ;

BROWN, WL ;

SMITS, FM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2707-&

[8] LOW-RATE PROTON BOMBARDMENT OF DIFFUSED SILICON COUNTERS [J].

SCOTT, RE .

NUCLEAR INSTRUMENTS & METHODS, 1965, 32 (01) :171-+

[9]

SCOTT RE, 1964, IEEE T NUCLEAR SCI, VNS11, P206

[10]

1964, 85 NAT BUR STAND HAN

← 1 →