ELECTRON ACTIVATION-ENERGY IN SI-DOPED ALGAAS GROWN BY MBE

[1] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[2] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[3] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY IN (AL,GA)AS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (10) : 680 - 681

[4] KANEKO K, 1977, INT PHYS C SER A, V33, P216

[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[6] LANG DV, 1979, I PHYS C SER, V43, P433

[7] THORPE AJS, 1975, J ELECTRON MATER, V4, P101

[8] DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L103 - L105

[9] YANG JJ, 1982, I PHYS C SER, V63, P107

[1] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[2] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[3] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY IN (AL,GA)AS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (10) : 680 - 681

[4] KANEKO K, 1977, INT PHYS C SER A, V33, P216

[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[6] LANG DV, 1979, I PHYS C SER, V43, P433

[7] THORPE AJS, 1975, J ELECTRON MATER, V4, P101

[8] DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L103 - L105

[9] YANG JJ, 1982, I PHYS C SER, V63, P107