VARIABLE TEMPERATURE HALL-EFFECT ON P-HG1-XCDXTE GROWN ON CDTE AND SAPPHIRE SUBSTRATES BY LIQUID-PHASE EPITAXY

被引：19

作者：

EDWALL, DD

GERTNER, ER

TENNANT, WE

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF02661221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 268

页数：24

共 11 条

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[9] ELECTRICAL-PROPERTIES OF AS-GROWN HG1-XCDX TE EPITAXIAL LAYERS [J].

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