CALCULATION OF DIFFUSION INDUCED STRESSES IN SILICON

被引：24

作者：

JAIN, RK ^{[1
]}

OVERSTRA.RJ ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB EYS & ELEKT HALFGELEIDERS,HEVERLEE,BELGIUM

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：125 / 130

页数：6

共 31 条

[1]

ABRIKOSOV NK, 1962, RUSS J INORG CHEM, V7, P429

[2] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J].

COHEN, BG .

SOLID-STATE ELECTRONICS, 1967, 10 (01) :33-&

[3]

Friedel J., 1964, DISLOCATIONS

[4] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[5] IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES [J].

INO, H ;

KAWAMURA, T ;

YASUFUKU, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) :692-&

[6] DIFFUSION-INDUCED DISLOCATION NETWORKS IN SI ( P + B DIFFUSION E/T ) [J].

JACCODINE, RJ .

APPLIED PHYSICS LETTERS, 1964, 4 (06) :114-&

[7] DISLOCATION-INDUCED DEVIATION OF PHOSPHORUS-DIFFUSION PROFILES IN SILICON [J].

JOSHI, ML ;

DASH, S .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (06) :446-&

[8] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

JOSHI, ML ;

WILHELM, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :185-&

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J].

KOOI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1383-1381

[10] MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN SI P-N JUNCTION DIODES BY USE OF ELECTRON BEAMS [J].

LANDER, JJ ;

SCHREIBER, H ;

BUCK, TM ;

MATHEWS, JR .

APPLIED PHYSICS LETTERS, 1963, 3 (11) :206-207

← 1 2 3 4 →