SPIN-ON DIFFUSED GASB MESA PHOTODIODE WITH HIGH BREAKDOWN VOLTAGES

被引：7

作者：

HEINZ, C

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 05期

关键词：

D O I：

10.1049/el:19860190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / 277

页数：2

共 7 条

[1] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[2] THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :273-274

[3] LOW DARK CURRENT GAALASSB PHOTO-DIODES [J].

CHIN, R ;

HILL, CM .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :332-333

[4] OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB [J].

HEINZ, C .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 54 (02) :247-254

[5] GASB PHOTO-DIODE FOR DETECTION OF 1.73-MU-M RADIATION OF ER-YLF LASER [J].

HEINZ, C ;

ALTENSTADT, WSA .

ELECTRONICS LETTERS, 1982, 18 (20) :859-860

[6] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

[7] LONG-WAVELENGTH (1.3- TO 1.6-MUM) DETECTORS FOR FIBER-OPTICAL COMMUNICATIONS [J].

STILLMAN, GE ;

COOK, LW ;

BULMAN, GE ;

TABATABAIE, N ;

CHIN, R ;

DAPKUS, PD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1355-1371

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