SUPERCONDUCTING INTEGRATED-CIRCUIT FABRICATION WITH LOW-TEMPERATURE ECR-BASED PECVD SIO2 DIELECTRIC FILMS

被引:33
作者
SAUVAGEAU, JE
BURROUGHS, CJ
BOOI, PAA
CROMAR, MW
BENZ, SP
KOCH, JA
机构
[1] National Institute of Standards and Technology, Boulder, CO
关键词
D O I
10.1109/77.403046
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A superconducting integrated circuit fabrication process has been developed to encompass a wide range of applications such as Josephson voltage standards, VLSI scale array oscillators, SQUIDs, and kinetic-inductance-based devices. An optimal Josephson junction process requires low temperature processing for all deposition and etching steps. This low temperature process involves an electron cyclotron resonance-based plasma-enhanced chemical vapor deposition of SiO2 films for interlayer dielectrics. Experimental design and statistical process control techniques have been used to ensure high quality oxide films. Oxide and niobium etches include endpoint detection and controlled overetch of all films. An overview of the fabrication process is presented.
引用
收藏
页码:2303 / 2309
页数:7
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