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THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .1. EMPIRICAL FOUNDATIONS AND PROCESS-CONTROLLING EQUATIONS

被引：3
作者：
KUHNE, H
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 04期
关键词：
D O I：
10.1002/crat.2170220408
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：487 / 494
页数：8
相关论文
共 12 条
[1]   INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH [J].
BLOEM, J ;
GILING, LJ ;
GRAEF, MWM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) :1354-1357
[2]  
Bloem J., 1972, Journal of Crystal Growth, V13-14, P302, DOI 10.1016/0022-0248(72)90174-1
[3]  
HERRING RB, 1979, FAL EL SOC M LOS ANG
[4]  
KOSCA G, 1983, CRYST RES TECHNOL, V18, P1533
[5]   DOPING OF EPITAXIAL CVD SILICON WITH ARSENIC OR PHOSPHORUS .2. NON-STEADY STATE CONDITIONS [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (06) :741-747
[6]   KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (10) :1217-1225
[7]   INCORPORATION OF DOPANTS INTO EPITAXIAL CVD-SILICON LAYERS AND INCORPORATION EQUILIBRIUM [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (11) :1379-1387
[8]   TOTAL PRESSURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION DURING THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON [J].
KUHNE, H .
CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (02) :181-187
[9]  
Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P361, DOI 10.1016/0022-0248(70)90064-3
[10]  
Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P353, DOI 10.1016/0022-0248(70)90063-1
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