DOPING OF EPITAXIAL CVD SILICON WITH ARSENIC OR PHOSPHORUS .2. NON-STEADY STATE CONDITIONS

被引：4

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1985年 / 20卷 / 06期

关键词：

D O I：

10.1002/crat.2170200605

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

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页码：741 / 747

页数：7

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