IMPACT IONIZATION NEAR GAAS GRAIN-BOUNDARIES

被引：8

作者：

PIKE, GE

GOURLEY, PL

KURTZ, SR

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：939 / 941

页数：3

共 12 条

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[8]

PIKE GE, 1982, MATER RES SOC S P, V5, P369

[9] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].

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PIKE, GE .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :709-711

[10] ANOMALOUS LOW-FREQUENCY GRAIN-BOUNDARY CAPACITANCE IN SILICON [J].

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