FORMATION AND BONDING STRUCTURE OF SILICON-NITRIDE BY 20-KEV N+ ION-IMPLANTATION

[1] LOW-ENERGY NITROGEN IMPLANTATION INTO SILICON - ITS MATERIAL COMPOSITION, OXIDATION RESISTANCE, AND ELECTRICAL CHARACTERISTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 408 - 412

[2] CHIU TY, 1984, J ELECTROCHEM SOC, V131, P2110, DOI 10.1149/1.2116029

[3] COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[4] ELECTRON-SPIN RESONANCE STUDIES ON ION-IMPLANTED SILICON .1. AMORPHIZATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1181 - 1189

[5] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 3076 - 3079

[6] ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 379 - 383

[7] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336

[8] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910

[9] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 217 - 228

[10] AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE FORMATION OF SILICON-NITRIDE BY IMPLANTING LOW-ENERGY NITROGEN-IONS INTO SILICON [J]. THIN SOLID FILMS, 1981, 85 (01) : 7 - 14

[1] LOW-ENERGY NITROGEN IMPLANTATION INTO SILICON - ITS MATERIAL COMPOSITION, OXIDATION RESISTANCE, AND ELECTRICAL CHARACTERISTICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 408 - 412

[2] CHIU TY, 1984, J ELECTROCHEM SOC, V131, P2110, DOI 10.1149/1.2116029

[3] COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[4] ELECTRON-SPIN RESONANCE STUDIES ON ION-IMPLANTED SILICON .1. AMORPHIZATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1181 - 1189

[5] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 3076 - 3079

[6] ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 379 - 383

[7] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336

[8] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910

[9] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 217 - 228

[10] AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY STUDIES OF THE FORMATION OF SILICON-NITRIDE BY IMPLANTING LOW-ENERGY NITROGEN-IONS INTO SILICON [J]. THIN SOLID FILMS, 1981, 85 (01) : 7 - 14