OPTICAL-MODEL FOR THE ELLIPSOMETRIC CHARACTERIZATION OF LOW-ENERGY ION-BEAM DAMAGE IN SINGLE-CRYSTAL SILICON

被引：19

作者：

BUCKNER, JL

VITKAVAGE, DJ

IRENE, EA

MAYER, TM

机构：

来源：

关键词：

D O I：

10.1149/1.2109004

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1729 / 1733

页数：5

共 17 条

[1] ARCHER RJ, MANUAL ELLIPSOMETRY, P14
[2] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P332
[3] ELLIPSOMETRY IN SUB-MONOLAYER REGION
BOOTSMA, GA
MEYER, F
[J]. SURFACE SCIENCE, 1969, 14 (01) : 52 - &
[4] TEMPERATURE-DEPENDENCE OF PT(111) SURFACE RELAXATION
DAVIES, JA
JACKSON, DP
MATSUNAMI, N
NORTON, PR
ANDERSEN, JU
[J]. SURFACE SCIENCE, 1978, 78 (02) : 274 - 294
[5] INVESTIGATION OF ION-IMPLANTED SEMICONDUCTORS BY ELLIPSOMETRY AND BACKSCATTERING SPECTROMETRY
FRIED, M
LOHNER, T
JAROLI, E
VIZKELETHY, G
MEZEY, G
GYULAI, J
SOMOGYI, M
KERKOW, H
[J]. THIN SOLID FILMS, 1984, 116 (1-3) : 191 - 198
[6] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS
FRIESER, RG
MONTILLO, FJ
ZINGERMAN, NB
CHU, WK
MADER, SR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241
[7] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES
IBACH, H
BRUCHMANN, HD
WAGNER, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03): : 113 - 124
[8] ELLIPSOMETRIC STUDY OF 400 EV ION DAMAGE IN SILICON
IBRAHIM, MM
BASHARA, NM
[J]. SURFACE SCIENCE, 1972, 30 (03) : 632 - &
[9] (100) AND (110) SI-SIO2 INTERFACE STUDIES BY MEV ION BACKSCATTERING
JACKMAN, TE
MACDONALD, JR
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. SURFACE SCIENCE, 1980, 100 (01) : 35 - 42
[10] KERN W, 1970, RCA REV, V31, P187