EFFECTS OF ION MIXING ON AL-SI CONTACTS

被引：4

作者：

PAI, CS ^{[1
]}

SCOTT, DM ^{[1
]}

LAU, SS ^{[1
]}

SUNI, I ^{[1
]}

ERANEN, S ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,SF-02150 ESPOO 15,FINLAND

来源：

THIN SOLID FILMS | 1985年 / 126卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(85)90317-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：241 / 249

页数：9

共 8 条

[1]

COHEN S, 1983, INTERFACES CONTACTS, P361

[2] CONTACT RESISTANCE - AL AND AL-SI TO DIFFUSED N+ AND P+ SILICON [J].

FAITH, TJ ;

IRVEN, RS ;

PLANTE, SK ;

ONEILL, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :443-448

[3] AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING [J].

HUNG, LS ;

MAYER, JW ;

ZHANG, M ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1123-1125

[4]

HUNG LS, 1984, THIN FILMS INTERFACE, V2

[5]

Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[6] DISSOLUTION OF AMORPHOUS SILICON INTO SOLID ALUMINUM [J].

SCRANTON, RA ;

MCCALDIN, JO .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1358-1361

[7]

SUNI I, UNPUB

[8] SLT DEVICE METALLURGY AND ITS MONOLITHIC EXTENSION [J].

TOTTA, PA ;

SOPHER, RP .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (03) :226-&

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