DISSOLUTION OF AMORPHOUS SILICON INTO SOLID ALUMINUM

被引：5

作者：

SCRANTON, RA

MCCALDIN, JO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1358 / 1361

页数：4

共 10 条

[1]

BOATRIGHT RL, 1976, J APPL PHYS, V47, P2260, DOI 10.1063/1.323015

[2] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].

HIRAKI, A ;

SHUTO, K ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[3] CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES [J].

KIRCHER, CJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5394-5399

[4]

MAJNI G, 1977, APPL PHYS LETT, V31, P126

[5] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&

[6] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :171-&

[7] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

NICOLET, MA ;

MAYER, JW ;

BLATTNER, RJ ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4678-4684

[8] Si Molecular Beam Epitaxy (n on n(+)) with Wide Range Doping Control [J].

Ota, Yusuke .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) :1795-1802

[9] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[10] DIFFUSION-LIMITED SI PRECIPITATION IN EVAPORATED AL/SI FILMS [J].

VANGURP, GJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2040-2050

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