CONTACT RESISTANCE - AL AND AL-SI TO DIFFUSED N+ AND P+ SILICON

被引：25

作者：

FAITH, TJ

IRVEN, RS

PLANTE, SK

ONEILL, JJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571943

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：443 / 448

页数：6

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共 13 条

[1] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES
BASTERFIELD, J
SHANNON, JM
GILL, A
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &
[2] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[3] EFFECT OF VACUUM AMBIENCE ON AL-SI CONTACTS
BLAIR, JC
GHATE, PB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 79 - 84
[4] CHANG IF, 1971, J ELECTROCHEM SOC, V117, P368
[5] CONTACT RESISTANCE IN METAL-SEMICONDUCTOR SYSTEMS
FANG, YK
CHANG, CY
SU, YK
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 933 - 938
[6] CONTACT RESISTANCE RESPONSE SURFACE OF SINTERED AL FILMS ON (100) SILICON
HECHT, LC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 328 - 330
[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
SANKUR, H
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &
[8] MINIMIZING ALUMINUM-TO-SILICON CONTACT RESISTANCE
MCNEIL, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1311 - &
[9] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS
NAGUIB, HM
HOBBS, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 573 - 577
[10] ALUMINUM SPEARING IN SILICON INTEGRATED-CIRCUITS
PRICE, TE
BERTHOUD, LA
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1303 - 1304