EFFECT OF VACUUM AMBIENCE ON AL-SI CONTACTS

被引：12

作者：

BLAIR, JC ^{[1
]}

GHATE, PB ^{[1
]}

机构：

[1] TEXAS INSTR INC,SEMICONDUCTOR RES & ENGN LAB,DALLAS,TX 75222

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：79 / 84

页数：6

共 10 条

[1]

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[3] PLATINUM SILICIDE FORMATION - ELECTRON-SPECTROSCOPY OF PLATINUM-PLATINUM SILICIDE INTERFACE [J].

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MCGUIRE, GE .

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[4]

GHATE PB, 1971, RADCTR71186 AIR FORC

[5] ELECTRICAL CONTACTS TO SILICON [J].

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CUNNINGHAM, JA ;

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SOLID-STATE ELECTRONICS, 1965, 8 (10) :831-+

[6] EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J].

LEARN, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :894-906

[7]

RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, P199

[8]

Sello H., 1969, Ohmic contacts to semiconductors, P277

[9] METALLIZATION SYSTEMS FOR SILICON INTEGRATED CIRCUITS [J].

TERRY, LE ;

WILSON, RW .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1580-&

[10]

UTI100C PREC MASS AN

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