STRUCTURE AND PROPERTIES OF FERROELECTRIC PBZR0.2TI0.8O3/YBA2CU3O7 HETEROSTRUCTURES

被引：8

作者：

RAMESH, R

CHAN, WK

WILKENS, B

INAM, A

TILLEROT, F

SANDS, TD

TARASCON, JM

KERAMIDAS, VG

机构：

[1] Bellcore, Red Bank, 07701, NJ

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 05期

关键词：

PZT/YBCO; INSITU PULSED LASER DEPOSITION; NONVOLATILE MEMORIES;

D O I：

10.1007/BF02655618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial thin film PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures have been grown on single crystal LaAlO3 by in-situ pulsed laser deposition. Structural characterization by x-ray diffraction, and transmission electron microscopy reveals that the films are typically c-axis oriented with a small fraction of a-axis oriented material, that is deposition condition dependent. The electrical properties change systematically with the crystalline quality and the best properties are obtained at higher temperatures. Above 715-degrees-C, there is progressive loss of lead and the electrical properties are diminished.

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页码：513 / 518

页数：6

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