SCHOTTKY ENHANCEMENT OF REACTED NIAL N-GAAS CONTACTS

被引：7

作者：

CHEN, CP ^{[1
]}

CHANG, YA ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT CHEM ENGN,MADISON,WI 53706

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky enhancement of reacted NiAl/n-GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the as-deposited contacts to 0.96 eV when the contacts were annealed at 400-degrees-C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross-sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.

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页码：3485 / 3487

页数：3

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