ELECTRONIC-STRUCTURE CALCULATION OF POINT-DEFECTS IN SILICON

被引:2
作者
BEELER, F [1 ]
ANDERSEN, OK [1 ]
GUNNARSSON, O [1 ]
JEPSEN, O [1 ]
SCHEFFLER, M [1 ]
机构
[1] PHYS TECH BUNDESANSTALT, D-3300 BRUNSWICK, FED REP GER
关键词
CHALCOGEN IMPURITIES - COMPUTATIONAL PHYSICS - ELECTRONIC-STRUCTURE CALCULATION - POINT DEFECTS;
D O I
10.1016/0010-4655(87)90085-3
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
(Edited Abstract)
引用
收藏
页码:297 / 305
页数:9
相关论文
共 54 条
[1]  
ANDERSEN OK, 1985, P E FERMI INT SCH PH
[2]   THEORETICAL-MODEL OF THE AU-FE COMPLEX IN SILICON [J].
ASSALI, LVC ;
LEITE, JR ;
FAZZIO, A .
PHYSICAL REVIEW B, 1985, 32 (12) :8085-8091
[3]   MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].
ASSALI, LVC ;
LEITE, JR .
PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982
[4]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[5]  
BARAFF GA, 1979, PHYS REV B, V19, P1965
[6]   BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132
[7]   IDENTIFICATION OF CHALCOGEN POINT-DEFECT SITES IN SILICON BY TOTAL-ENERGY CALCULATIONS [J].
BEELER, F ;
SCHEFFLER, M ;
JEPSEN, O ;
GUNNARSSON, O .
PHYSICAL REVIEW LETTERS, 1985, 54 (23) :2525-2528
[8]  
Beeler F., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P129
[9]  
Beeler F., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P117
[10]   THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].
BEELER, F ;
ANDERSEN, OK ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501