ELECTROFORMED BREAKDOWN IN THIN INSULATING FILMS

被引：1

作者：

AGARWAL, VK ^{[1
]}

机构：

[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU 432,JAPAN

来源：

THIN SOLID FILMS | 1976年 / 33卷 / 03期

关键词：

D O I：

10.1016/0040-6090(76)90092-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L27 / L30

页数：4

共 11 条

[1] STUDIES OF TEMPERATURE-DEPENDENCE OF DIELECTRIC-BREAKDOWN FIELD IN MOLECULAR LANGMUIR FILMS [J].

AGARWAL, DK ;

SRIVASTAVA, VK .

THIN SOLID FILMS, 1975, 27 (01) :49-62

[2] TEMPERATURE DEPENDENCE OF DC DESTRUCTIVE BREAKDOWN FIELD IN BUILT-UP BARIUM STEARATE FILMS [J].

AGARWAL, DK ;

SRIVASTAVA, VK .

SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1461-+

[3]

Agarwal V. K., 1975, Electrocomponent Science and Technology, V2, P75, DOI 10.1155/APEC.2.75a

[4]

Agarwal V. K., 1974, Electrocomponent Science and Technology, V1, P87, DOI 10.1155/APEC.1.87

[5]

Agarwal V. K., 1975, Electrocomponent Science and Technology, V2, P1, DOI 10.1155/APEC.2.1

[6] THICKNESS DEPENDENT STUDIES OF DIELECTRIC BREAKDOWN IN LANGMUIR THIN MOLECULAR FILMS [J].

AGARWAL, VK ;

SRIVASTA.VK .

SOLID STATE COMMUNICATIONS, 1973, 12 (09) :829-834

[7] INTERPRETATION OF DESTRUCTIVE BREAKDOWN IN LANGMUIR MOLECULAR FILMS [J].

AGARWAL, VK .

THIN SOLID FILMS, 1974, 23 (01) :S9-S12

[8] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[9] NEGATIVE-RESISTANCE IN ORGANIC MONOMOLECULAR LAYERS SANDWICHED BETWEEN METAL ELECTRODES [J].

GUNDLACH, KH ;

KADLEC, J .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (02) :371-+

[10] NEGATIVE-RESISTANCE IN ORGANIC MONOMOLECULAR LAYERS - EXPERIMENTS ON TRIODES [J].

GUNDLACH, KH ;

KADLEC, J .

THIN SOLID FILMS, 1972, 13 (02) :225-230

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