STUDIES OF THE AG-GE(100) INTERFACE

被引：53

作者：

MILLER, T ^{[1
]}

ROSENWINKEL, E ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.570

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：570 / 577

页数：8

共 16 条

[1] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J].

BERTUCCI, M ;

LELAY, G ;

MANNEVILLE, M ;

KERN, R .

SURFACE SCIENCE, 1979, 85 (02) :471-492

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] APPLICATION OF ELECTRON-SPECTROSCOPY TO SURFACE STUDIES [J].

BRUNDLE, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :212-224

[4] X-RAY-DIFFRACTION STUDY OF THE GE(001) RECONSTRUCTED SURFACE [J].

EISENBERGER, P ;

MARRA, WC .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1081-1084

[5] THE 2X1 RECONSTRUCTION OF THE GE(001) SURFACE [J].

FERNANDEZ, JC ;

YANG, WS ;

SHIH, HD ;

JONA, F ;

JEPSEN, DW ;

MARCUS, PM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03) :L55-L60

[6] PROBABLE ATOMIC-STRUCTURE OF RECONSTRUCTED SI[001]2X1 SURFACES DETERMINED BY LOW-ENERGY ELECTRON-DIFFRACTION [J].

JONA, F ;

SHIH, HD ;

IGNATIEV, A ;

JEPSEN, DW ;

MARCUS, PM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (04) :L67-L72

[7] PHYSICS AND ELECTRONICS OF THE NOBLE-METAL ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION - A STATUS-REPORT [J].

LELAY, G .

SURFACE SCIENCE, 1983, 132 (1-3) :169-204

[8] EPITAXIAL-GROWTH OF AG FILMS ON GE(001) [J].

LINCE, JR ;

NELSON, JG ;

WILLIAMS, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :553-557

[9] CRYSTALLOGRAPHIC RELATIONSHIPS AND INTERFACIAL PROPERTIES OF AG ON GAAS(100) SURFACES [J].

LUDEKE, R ;

CHIANG, TC ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :599-606

[10] SURFACE CORE-LEVEL SHIFTS FOR GE(100)-(2X1) [J].

MILLER, T ;

ROSENWINKEL, E ;

CHIANG, TC .

SOLID STATE COMMUNICATIONS, 1983, 47 (11) :935-938

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