EFFECTS OF DEPOSITION METHODS ON THE TEMPERATURE-DEPENDENT RESISTIVITY OF TUNGSTEN FILMS

被引:23
作者
KRUSINELBAUM, L [1 ]
AHN, K [1 ]
SOUK, JH [1 ]
TING, CY [1 ]
NESBIT, LA [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 06期
关键词
D O I
10.1116/1.573637
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3106 / 3110
页数:5
相关论文
共 13 条
[1]   SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].
BROADBENT, EK ;
RAMILLER, CL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433
[2]   A NEW MASKING TECHNIQUE FOR SEMICONDUCTOR PROCESSING [J].
BROWN, DM ;
ENGELER, WE ;
GARFINKE.M ;
HEUMANN, FK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :730-&
[3]   REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J].
BROWN, DM ;
ENGELER, WE ;
GARFINKEL, M ;
GRAY, PV .
SOLID-STATE ELECTRONICS, 1968, 11 (12) :1105-+
[4]   The conductivity of thin metallic films according to the electron theory of metals [J].
Fuchs, K .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108
[5]   CHARACTERIZATION AND CRYSTALLINE-STRUCTURES OF TUNGSTEN THIN-FILMS [J].
GASGNIER, M ;
NEVOT, L ;
BAILLIF, P ;
BARDOLLE, J .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 79 (02) :531-542
[6]   HIGH-SPEED P-CHANNEL RANDOM-ACCESS 1024-BIT MEMORY MADE WITH ELECTRON LITHOGRAPHY [J].
HENDERSON, RC ;
PEASE, RF ;
VOSHCHENKOV, AM ;
HELM, RF ;
WADSACK, RL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (02) :92-97
[7]   A NEW TUNGSTEN GATE PROCESS FOR VLSI APPLICATIONS [J].
IWATA, S ;
YAMAMOTO, N ;
KOBAYASHI, N ;
TERADA, T ;
MIZUTANI, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1174-1179
[8]  
LEARN AD, 1985, J APPL PHYS, V58, P1
[9]   ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES [J].
MAYADAS, AF ;
SHATZKES, M .
PHYSICAL REVIEW B, 1970, 1 (04) :1382-&
[10]  
MAYADAS AF, 1969, J ELECTROCHEM SOC, V116, P1792