STRAIN IN GAAS BY LOW-DOSE ION-IMPLANTATION

被引：42

作者：

PAINE, BM ^{[1
]}

HURVITZ, NN ^{[1
]}

SPERIOSU, VS ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

关键词：

D O I：

10.1063/1.338112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1335 / 1339

页数：5

共 16 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3935 - 3940
[7] PAINE BM, UNPUB J APPL PHYS
[8] Prilepskii M. V., 1982, Soviet Physics - Technical Physics, V27, P384
[9] SEGMULLER A, 1986, ANAL TECHNIQUES THIN
[10] KINEMATICAL X-RAY-DIFFRACTION IN NONUNIFORM CRYSTALLINE FILMS - STRAIN AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED GARNETS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6094 - 6103