IMPROVEMENT IN LASING CHARACTERISTICS OF II-VI BLUE-GREEN LASERS USING QUATERNARY AND TERNARY ALLOYS TO PRODUCED PSEUDOMORPHIC HETEROSTRUCTURES

被引:13
作者
PETRUZZELLO, J
DRENTEN, R
GAINES, JM
机构
[1] Philips Laboratories, Briarcliff Manor, NY 10510
关键词
D O I
10.1016/0022-0248(94)90891-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Pseudomorphic heterostructures with increased electrical and optical confinement were used to improve II-VI blue-green laser operating characteristics. These lasers employ Zn1-xMgxSySe1-y alloys for the cladding layers, ZnSySe1-y for the waveguiding layers and Zn1-zCdzSe quantum wells for the active layer. The defect density through the active layer in such a heterostructure was found to range from less-than-or-equal-to 4 X 10(6) to 6 x 10(8) cm-2 . The density found in the active layer is directly related to the growth of the quaternary alloy which is often accompanied by a high density of stacking faults and threading dislocations. By comparing lasers with varying defect densities a direct correlation between the threshold current density and the structural quality has been observed. The lasers with the lowest defect density have threshold current densities of 400 A/cm2 (without facet coating) which are the lowest reported for II-VI devices and comparable to state-of-the-art III-V devices.
引用
收藏
页码:686 / 691
页数:6
相关论文
共 8 条
[1]   BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].
GAINES, JM ;
DRENTEN, RR ;
HABERERN, KW ;
MARSHALL, T ;
MENSZ, P ;
PETRUZZELLO, J .
APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464
[2]  
GUHA S, COMMUNICATION
[3]   BLUE-GREEN LASER-DIODES [J].
HAASE, MA ;
QIU, J ;
DEPUYDT, JM ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274
[4]   INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS [J].
KIMERLING, LC ;
PETROFF, P ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1976, 28 (06) :297-300
[5]   ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].
NAKAYAMA, N ;
ITOH, S ;
OHATA, T ;
NAKANO, K ;
OKUYAMA, H ;
OZAWA, M ;
ISHIBASHI, A ;
IKEDA, M ;
MORI, Y .
ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489
[6]   NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES [J].
PETROFF, P ;
JOHNSTON, WD ;
HARTMAN, RL .
APPLIED PHYSICS LETTERS, 1974, 25 (04) :226-228
[7]  
PETRUZZELLO J, UNPUB J APPL PHYS
[8]   QUANTUM-WELL GAAS/ALGAAS DIODE-LASERS GROWN IN A PLANET OMVPE REACTOR [J].
VANDERPOEL, CJ ;
AMBROSIUS, HPMM ;
LINDERS, RWM ;
KIWIET, NJ ;
RIJPERS, J .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :300-306