TERTIARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON

被引：6

作者：

TAMURA, M ^{[1
]}

YOSHIHIRO, N ^{[1
]}

IKEDA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 08期

关键词：

D O I：

10.1063/1.88518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：427 / 429

页数：3

共 11 条

[1]

DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P238

[2]

IKEDA T, 1974, 6TH P C SOL STAT DEV, P311

[3] CALCULATION OF DIFFUSION INDUCED STRESSES IN SILICON [J].

JAIN, RK ;

OVERSTRA.RJ .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :125-130

[4] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

JOSHI, ML ;

WILHELM, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :185-&

[5] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J].

PRUSSIN, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1635-1642

[6]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7]

PRUSSIN S, 1974, 4TH P INT C ION IMPL

[8] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[9] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON [J].

TAMURA, M .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :651-653

[10]

TAMURA M, 1971, 2ND P C SOL STAT DEV, P9

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