PHOTOLUMINESCENCE STUDY ON UNDOPED SINGLE QUANTUM WELL PSEUDOMORPHIC STRUCTURES

被引：8

作者：

KIRBY, PB

SIMPSON, MB

WILCOX, JD

SMITH, RS

KERR, TM

MILLER, BA

WOOD, CEC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2158 / 2160

页数：3

相关论文

共 5 条

[1] EFFECT OF INTERFACE STRUCTURE ON PHOTOLUMINESCENCE OF INGAAS/GAAS PSEUDOMORPHIC SINGLE QUANTUM-WELLS [J].

DEVINE, RLS ;

MOORE, WT .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3999-4001

[2] DC AND MICROWAVE CHARACTERISTICS OF A HIGH-CURRENT DOUBLE INTERFACE GAAS/INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

KLEM, J ;

PENG, CK ;

GEDYMIN, JS ;

KOPP, W ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1080-1082

[3] TEMPERATURE-DEPENDENT OPTICAL-SPECTRA OF SINGLE QUANTUM-WELLS FABRICATED USING INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

KOTELES, ES ;

ELMAN, BS ;

JAGANNATH, C ;

CHEN, YJ .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1465-1467

[4] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].

MARZIN, JY ;

CHARASSE, MN ;

SERMAGE, B .

PHYSICAL REVIEW B, 1985, 31 (12) :8298-8301

[5] PHOTOLUMINESCENCE FROM INGAAS-GAAS STRAINED-LAYER SUPERLATTICES GROWN BY FLOW-RATE MODULATION EPITAXY [J].

SATO, M ;

HORIKOSHI, Y .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :123-126