PHOTOLUMINESCENCE FROM INGAAS-GAAS STRAINED-LAYER SUPERLATTICES GROWN BY FLOW-RATE MODULATION EPITAXY

被引：11

作者：

SATO, M

HORIKOSHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

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D O I：

10.1063/1.99070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：123 / 126

页数：4

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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 909 - 911
[9] MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
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