TIO2 THIN-FILMS FORMED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION AT HIGH-TEMPERATURE AND THEIR APPLICATION TO CAPACITOR DIELECTRICS

Low-leakage-current rutile-TiO2 thin films were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films. Rutile-TiO2 thin films could be obtained at substrate temperatures above 280 degrees C. A relative dielectric constant of about 120 was obtained at substrate temperatures above 390 degrees C. Leakage current characteristics of the TiO2 thin films were improved by using high-temperature plasma oxidation and high-work-function electrodes. A leakage current of less than 1x10(-8) A/cm(2) at an applied voltage of 1.25 V was obtained for a Au/TiO2/Pt capacitor with SiO2 equivalent thickness of 4.9 nm.