TIO2 THIN-FILMS FORMED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION OF TI THIN-FILMS

被引：6

作者：

ABE, Y

FUKUDA, T

机构：

[1] Hitachi Research Laboratory, Hitachi Ltd., Hitachi-shi, Ibaraki, 319-12

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8B期

关键词：

THIN FILMS; ECR; PLASMA OXIDATION; TIO2; CAPACITANCE;

D O I：

10.1143/JJAP.32.L1167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2 thin films with a relative-dielectric constant of 20 were fabricated by electron cyclotron resonance (ECR) Plasma oxidation of Ti thin films without substrate heating. The relative-dielectric constant was found to be constant for film thicknesses from 3.5 to 26 nm, and the maximum capacitance of 37 fF/mum2 was obtained for the thickness of 3.5 nm.

引用

页码：L1167 / L1168

页数：2

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