CALCULATION OF DIFFUSION COMPONENT OF LEAKAGE CURRENT IN PN JUNCTIONS FORMED IN VARIOUS TYPES OF SILICON-WAFERS (INTRINSIC GETTERING, EPITAXIAL, SILICON-ON-INSULATOR)

被引：17

作者：

MURAKAMI, Y ^{[1
]}

ABE, H ^{[1
]}

SHINGYOUJI, T ^{[1
]}

机构：

[1] MITSUBISHI MAT SILICON CORP,NODA,CHIBA 278,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 03期

关键词：

PN JUNCTION LEAKAGE; DIFFUSION CURRENT; INTRINSIC GETTERING; EPITAXIAL; SOI;

D O I：

10.1143/JJAP.34.1477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We derived a general analytical formula for the diffsion component of leakage current in pn junctions formed in various types of silicon wafers such as intrinsic gettering (IG), epitaxial (EPI), and silicon on insulator (SOI) wafers. From this analysis, it can be understood quantitatively that def ect regions in IG wafers increase the diffusion current, although heavily doped regions in epitaxial wafers decrease the diffusion current, and in SOI wafers the diffusion current can be considerably reduced when there is a low recombination velocity at the Si/SiO2 interface.

引用

页码：1477 / 1482

页数：6

共 8 条

[1] LATCH-UP AND IMAGE CROSSTALK SUPPRESSION BY INTERNAL GETTERING [J].