ON THE CAPACITANCE OF METAL THIN OXIDE SEMICONDUCTOR STRUCTURES WITH LOCALIZED OXIDE STATES

被引：1

作者：

NANNINI, A ^{[1
]}

BAGNOLI, PE ^{[1
]}

机构：

[1] UNIV PISA,FAC INGN,IST ELETTTR & TELECOMUN,I-56100 PISA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 04期

关键词：

D O I：

10.1016/0038-1101(89)90086-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：337 / 338

页数：2

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