EFFECTS OF INTERFACIAL STATES ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF PD/SIO2/N-SI SCHOTTKY DIODES

被引：4

作者：

BAGNOLI, PE

NANNINI, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 10期

关键词：

D O I：

10.1016/0038-1101(87)90091-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1005 / 1012

页数：8

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