REVERSIBLE NEUTRALIZATION OF BORON ACCEPTORS BY HYDROGEN IN PD-SIO2-SI CAPACITORS

被引：6

作者：

FARE, TL

LUNDSTROM, I

ZEMEL, JN

FEYGENSON, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：632 / 634

页数：3

共 20 条

[1] A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR [J].

ARMGARTH, M ;

NYLANDER, C .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :91-92

[2]

ARMGARTH M, 1984, THESIS LINKOPING TU

[3] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS [J].

COHEN, SS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :929-932

[4]

FARE TL, 1985, THESIS U PENNSYLVANI

[5]

GALE R, 1983, J APPL PHYS, V54, P6983

[6] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J].

HANSEN, WL ;

PEARTON, SJ ;

HALLER, EE .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608

[7]

HEINE K, 1978, NONDESTRUCTIVE EVALU

[8] PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES [J].

KERAMATI, B ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1091-1099

[9] PD-THIN-SIO2-SI DIODE .2. THEORETICAL MODELING AND THE H-2 RESPONSE [J].

KERAMATI, B ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1100-1109

[10] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J].

LUNDSTROEM, I ;

SHIVARAMAN, S ;

SVENSSON, C ;

LUNDKVIST, L .

APPLIED PHYSICS LETTERS, 1975, 26 (02) :55-57

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